HIGH-POWER ETCHED-FACET LASERS

被引：10

作者：

TIHANYI, P

WAGNER, DK

VOLLMER, HJ

ROZA, AJ

HARDING, CM

DAVIS, RJ

WOLF, ED

机构：

[1] CORNELL UNIV,SCH APPL & ENGN PHYS,ITHACA,NY 14853

[2] CORNELL UNIV,NATL RESOURCE & RES FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 15期

关键词：

D O I：

10.1049/el:19870548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：772 / 773

页数：2

共 10 条

[1] INGAASP-INP PLANAR-STRIPE LASERS FABRICATED BY WET CHEMICAL ETCHING [J].

ADACHI, S ;

KAWAGUCHI, H .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3176-3178

[2] LOW THRESHOLD GAAS/GAALAS BH LASERS WITH ION-BEAM-ETCHED MIRRORS [J].

BOUADMA, N ;

RIOU, J ;

KAMPFER, A .

ELECTRONICS LETTERS, 1985, 21 (13) :566-568

[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].

COLDREN, LA ;

IGA, K ;

MILLER, BI ;

RENTSCHLER, JA .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683

[4] FOCUSED-ION-BEAM MICROMACHINED ALGAAS SEMICONDUCTOR-LASER MIRRORS [J].

PURETZ, J ;

DEFREEZ, RK ;

ELLIOTT, RA ;

ORLOFF, J .

ELECTRONICS LETTERS, 1986, 22 (13) :700-702

[5] ALGAAS/GAAS BURIED MULTIQUANTUM WELL LASERS WITH A REACTIVE ION ETCHED WINDOW FACET [J].

SEMURA, S ;

OHTA, T ;

KURODA, T ;

NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L463-L465

[6]

TIHANYI P, 1987, TOPICAL M SEMICONDUC, P95

[7]

TIHANYI P, 1986, Patent No. 4623086

[8]

TIHANYI P, 1987, SPIE S ADV SEMICONDU

[9]

TIHANYI P, IN PRESS APPL PHYS L

[10] DRY-ETCHED-CAVITY PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS [J].

YUASA, T ;

MANNOH, M ;

ASAKAWA, K ;

SHINOZAKI, K ;

ISHII, M .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :748-750

← 1 →