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MINIATURIZATION OF SI MOSFET AT 77-K
被引:24
作者
:
KAMGAR, A
论文数:
0
引用数:
0
h-index:
0
KAMGAR, A
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1982年
/ 29卷
/ 08期
关键词
:
D O I
:
10.1109/T-ED.1982.20860
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1226 / 1228
页数:3
相关论文
共 6 条
[1]
GENERALIZED GUIDE FOR MOSFET MINIATURIZATION
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
;
FICHTNER, W
论文数:
0
引用数:
0
h-index:
0
FICHTNER, W
;
NICOLLIAN, EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIAN, EH
;
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
.
ELECTRON DEVICE LETTERS,
1980,
1
(01)
:2
-4
[2]
CHARGE-SHEET MODEL OF MOSFET
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
.
SOLID-STATE ELECTRONICS,
1978,
21
(02)
:345
-355
[3]
VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION
[J].
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
GAENSSLEN, FH
;
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
RIDEOUT, VL
;
WALKER, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
WALKER, EJ
;
WALKER, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
WALKER, JJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(03)
:218
-229
[4]
SUBTHRESHOLD BEHAVIOR OF SILICON MOSFETS AT 4.2-K
[J].
KAMGAR, A
论文数:
0
引用数:
0
h-index:
0
KAMGAR, A
.
SOLID-STATE ELECTRONICS,
1982,
25
(07)
:537
-539
[5]
Sze S.M., 1981, PHYSICS SEMICONDUCTO, P24
[6]
SUB-THRESHOLD CONDUCTION IN MOSFETS
[J].
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
TAYLOR, GW
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(03)
:337
-350
←
1
→
共 6 条
[1]
GENERALIZED GUIDE FOR MOSFET MINIATURIZATION
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
;
FICHTNER, W
论文数:
0
引用数:
0
h-index:
0
FICHTNER, W
;
NICOLLIAN, EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIAN, EH
;
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
.
ELECTRON DEVICE LETTERS,
1980,
1
(01)
:2
-4
[2]
CHARGE-SHEET MODEL OF MOSFET
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
.
SOLID-STATE ELECTRONICS,
1978,
21
(02)
:345
-355
[3]
VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION
[J].
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
GAENSSLEN, FH
;
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
RIDEOUT, VL
;
WALKER, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
WALKER, EJ
;
WALKER, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
WALKER, JJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(03)
:218
-229
[4]
SUBTHRESHOLD BEHAVIOR OF SILICON MOSFETS AT 4.2-K
[J].
KAMGAR, A
论文数:
0
引用数:
0
h-index:
0
KAMGAR, A
.
SOLID-STATE ELECTRONICS,
1982,
25
(07)
:537
-539
[5]
Sze S.M., 1981, PHYSICS SEMICONDUCTO, P24
[6]
SUB-THRESHOLD CONDUCTION IN MOSFETS
[J].
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
TAYLOR, GW
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(03)
:337
-350
←
1
→