IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819

[2] COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2158 - 2160

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021

[4] CHENG KY, UNPUB APPL PHYS LETT

[5] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459

[6] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355

[7] LIAO ASH, UNPUB ELECT DEVICE L

[8] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 242 - 244

[9] SCHOTTKY BARRIERS AND OHMIC CONTACTS ON NORMAL-TYPE INP BASED COMPOUND SEMICONDUCTORS FOR MICROWAVE FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 1 - 5

[10] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 619 - 627

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819

[2] COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2158 - 2160

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021

[4] CHENG KY, UNPUB APPL PHYS LETT

[5] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459

[6] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355

[7] LIAO ASH, UNPUB ELECT DEVICE L

[8] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 242 - 244

[9] SCHOTTKY BARRIERS AND OHMIC CONTACTS ON NORMAL-TYPE INP BASED COMPOUND SEMICONDUCTORS FOR MICROWAVE FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 1 - 5

[10] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 619 - 627