IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES

被引：35

作者：

OCONNOR, P

PEARSALL, TP

CHENG, KY

CHO, AY

HWANG, JCM

ALAVI, K

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 03期

关键词：

D O I：

10.1109/EDL.1982.25480

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：64 / 66

页数：3

共 16 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J].

BANDY, S ;

NISHIMOTO, C ;

HYDER, S ;

HOOPER, C .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :817-819

[2] COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS [J].

CAPPY, A ;

CARNEZ, B ;

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SALMER, G ;

CONSTANT, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2158-2160

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR ;

BONNER, WA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1015-1021

[4]

CHENG KY, UNPUB APPL PHYS LETT

[5] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[6] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRONICS LETTERS, 1980, 16 (10) :353-355

[7]

LIAO ASH, UNPUB ELECT DEVICE L

[8] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :242-244

[9] SCHOTTKY BARRIERS AND OHMIC CONTACTS ON NORMAL-TYPE INP BASED COMPOUND SEMICONDUCTORS FOR MICROWAVE FETS [J].

MORKOC, H ;

DRUMMOND, TJ ;

STANCHAK, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) :1-5

[10] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET) [J].

MORKOC, H ;

BANDY, SG ;

SANKARAN, R ;

ANTYPAS, GA ;

BELL, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :619-627

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