CAPLESS ANNEALING OF ION-IMPLANTED GAAS

被引：40

作者：

IMMORLICA, AA ^{[1
]}

EISEN, FH ^{[1
]}

机构：

[1] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 02期

关键词：

D O I：

10.1063/1.88981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：94 / 95

页数：2

相关论文

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