High performance AlGaN/GaN HEMTs with 2.4 mu m source-drain spacing

被引：1

作者：

Wang Dongfang ^{[1
,2
]}

Wei Ke ^{[1
]}

Yuan Tingting ^{[1
,2
]}

Liu Xinyu ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2010年 / 31卷 / 03期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN HEMT; high frequency; source-drain spacing;

D O I：

10.1088/1674-4926/31/3/034001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper describes the performance of AlGaN/GaN HEMTs with 2.4 mu m source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 mu m source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased.

引用

页数：3

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