HIGH-PERFORMANCE SOLAR CELL MATERIAL - NORMAL-ALAS-PARA-GAAS PREPARED BY VAPOR-PHASE EPITAXY

被引：37

作者：

JOHNSTON, WD ^{[1
]}

CALLAHAN, WM ^{[1
]}

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 03期

关键词：

D O I：

10.1063/1.88671

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：150 / 152

页数：3

共 11 条

[1] VAPOR GROWTH AND PROPERTIES OF AIAS [J].

ETTENBERG, M ;

SIGAI, AG ;

DREEBEN, A ;

GILBERT, SL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) :1355-+

[2] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J].

HAYASHI, I ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :150-&

[3] GA1-XALXAS-GAAS P-P-N HETEROJUNCTION SOLAR CELLS [J].

HOVEL, HJ ;

WOODALL, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) :1246-1252

[4]

HUBER D, 1974, 1973 P IEEE PHOT SPE

[5] GAAS CONCENTRATOR SOLAR CELL [J].

JAMES, LW ;

MOON, RL .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :467-470

[6]

JOHNSTON WD, TO BE PUBLISHED

[7]

JOHNSTON WD, UNPUBLISHED

[8]

Milnes AG, 1972, HETEROJUNCTIONS META

[9] PROPERTIES OF VAPOR-DEPOSITED ALUMINUM ARSENIDE [J].

SIGAI, AG ;

ABRAHAMS, MS ;

BLANC, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) :952-&

[10] PARA-INP-NORMAL-CDS SOLAR CELLS AND PHOTOVOLTAIC DETECTORS [J].

WAGNER, S ;

SHAY, JL ;

BACHMANN, KJ ;

BUEHLER, E .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :229-230

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