DOUBLE-CRYSTAL TOPOGRAPHIC INVESTIGATION OF MISFIT DISLOCATIONS IN SILICON EPITAXIAL LAYERS

被引：3
作者：
WIERZCHOWSKI, W
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 88卷 / 01期
关键词：
D O I：
10.1002/pssa.2210880107
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：77 / 87
页数：11
相关论文
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