OXIDATION OF SILICON - NEW ELECTRON-SPECTROSCOPY RESULTS

被引：54
作者：
ROWE, JE
MARGARITONDO, G
IBACH, H
FROITZHEIM, H
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] INST GRENZFLACH FORSCH & VACUUM PHYS,KERN FORSCH LAGE,JULICH,FED REP GER
来源：
SOLID STATE COMMUNICATIONS | 1976年 / 20卷 / 03期
关键词：
D O I：
10.1016/0038-1098(76)90194-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：277 / 280
页数：4
相关论文
共 11 条
[1]   CALORIMETRIC STUDY OF ADSORPTION OF OXYGEN AND GASES HXA ON GERMANIUM AND SILICON [J].
BOOTSMA, GA .
SURFACE SCIENCE, 1969, 15 (02) :340-&
[2]   REDUCTION OF SPURIOUS BACKGROUND PEAKS IN ELECTRON SPECTROMETERS [J].
FROITZHEIM, H ;
IBACH, H ;
LEHWALD, S .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (10) :1325-1328
[3]   X-RAY PHOTOELECTRON SATELLITES FROM ADSORBED SPECIES [J].
FUGGLE, JC ;
MADEY, TE ;
STEINKILBERG, M ;
MENZEL, D .
CHEMICAL PHYSICS LETTERS, 1975, 33 (02) :233-236
[4]   KINETICS AND MECHANISM OF OXYGEN ADSORPTION ON SINGLE CRYSTALS OF GERMANIUM [J].
GREEN, M ;
LIBERMAN, A .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) :1407-+
[5]   THE ADSORPTION OF OXYGEN ON CLEAN SILICON SURFACES [J].
GREEN, M ;
MAXWELL, KH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (1-2) :145-150
[6]   ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J].
IBACH, H ;
ROWE, JE .
PHYSICAL REVIEW B, 1974, 10 (02) :710-718
[7]   ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES [J].
IBACH, H ;
ROWE, JE .
PHYSICAL REVIEW B, 1974, 9 (04) :1951-1957
[8]   ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1. [J].
IBACH, H ;
HORN, K ;
DORN, R ;
LUTH, H .
SURFACE SCIENCE, 1973, 38 (02) :433-454
[9]   OXIDATION OF CLEAN GE AND SI SURFACES [J].
LUDEKE, R ;
KOMA, A .
PHYSICAL REVIEW LETTERS, 1975, 34 (18) :1170-1173
[10]   ELECTRON-ENERGY-LOSS SPECTROSCOPY OF SEMICONDUCTING SMS(100) - EVIDENCE FOR A SURFACE PHASE-TRANSITION [J].
ROWE, JE ;
CAMPAGNA, M ;
CHRISTMAN, SB ;
BUCHER, E .
PHYSICAL REVIEW LETTERS, 1976, 36 (03) :148-151
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