INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC-PROPERTIES OF SIO2/INP MISFETS

被引：20

作者：

GEIB, KM ^{[1
]}

GOODNICK, SM ^{[1
]}

LIN, DY ^{[1
]}

GANN, RG ^{[1
]}

WILMSEN, CW ^{[1
]}

WAGER, JF ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：516 / 521

页数：6

共 16 条

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[2] SURFONS AND ELECTRON-MOBILITY IN SILICON INVERSION LAYERS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) : 126 - 155
[3] SURFACE-ROUGHNESS SCATTERING AT THE SI-SIO2 INTERFACE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 803 - 808
[4] NEW MODEL FOR SLOW CURRENT DRIFT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 453 - 455
[5] GREENE RF, 1969, MOL PROCESSES SOLID, P239
[6] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS
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NING, TH
FOWLER, AB
[J]. SURFACE SCIENCE, 1976, 58 (01) : 178 - 181
[7] HESS K, 1979, SOLID STATE COMMUN, V30, P807, DOI 10.1016/0038-1098(79)90051-6
[8] THE STRUCTURE OF ULTRATHIN OXIDE ON SILICON
KRIVANEK, OL
MAZUR, JH
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 392 - 394
[9] THE EFFECT OF INTERFACIAL TRAPS ON THE STABILITY OF INSULATED GATE DEVICES ON INP
LILE, DL
TAYLOR, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 260 - 267
[10] SCATTERING OF INVERSION LAYER ELECTRONS BY OXIDE POLAR MODE GENERATED INTERFACE PHONONS
MOORE, BT
FERRY, DK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1037 - 1040

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