INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC-PROPERTIES OF SIO2/INP MISFETS

被引：20

作者：

GEIB, KM ^{[1
]}

GOODNICK, SM ^{[1
]}

LIN, DY ^{[1
]}

GANN, RG ^{[1
]}

WILMSEN, CW ^{[1
]}

WAGER, JF ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：516 / 521

页数：6

共 16 条

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