OPEN-CIRCUIT VOLTAGE OF MIS SILICON SOLAR-CELLS

被引：96

作者：

PONPON, JP

SIFFERT, P

机构：

[1] UNIV LOUIS PASTEUR,PHYS RAYONNEMENTS & ELECTR NUCL LAB,F-67037 STRASBOURG,FRANCE

[2] CTR RECH NUCL,STRASBOURG,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.323122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3248 / 3251

页数：4

共 12 条

[1] IV CHARACTERISTICS FOR SILICON SCHOTTKY SOLAR CELLS [J].

ANDERSON, WA ;

MILANO, RA .

PROCEEDINGS OF THE IEEE, 1975, 63 (01) :206-208

[2]

ANDERSON WA, TO BE PUBLISHED

[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[4]

CHARLSON FJ, 1975, J APPL PHYS, V46, P3982

[5]

Fonash S. J., 1975, 11th IEEE Photovoltaic Specialists Conference, P376

[6] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J].

FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1286-1289

[7] OXIDATION OF SI SURFACES [J].

HAAS, GA ;

GRAY, HF .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3885-3887

[8] LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) OF SIO2-SI INTERFACE [J].

HARRINGTON, WL ;

HONIG, RE ;

GOODMAN, AM ;

WILLIAMS, R .

APPLIED PHYSICS LETTERS, 1975, 27 (12) :644-645

[9] EFFECTS OF INTERFACIAL OXIDE LAYERS ON PERFORMANCE OF SILICON SCHOTTKY-BARRIER SOLAR CELLS [J].

LILLINGTON, DR ;

TOWNSEND, WG .

APPLIED PHYSICS LETTERS, 1976, 28 (02) :97-98

[10]

PECKERAR M, TO BE PUBLISHED

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