THERMAL CHARACTERISTICS OF GAAS LASER JUNCTIONS UNDER HIGH POWER PULSED CONDITIONS

被引：48

作者：

ENGELER, W

GARFINKEL, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 07期

关键词：

D O I：

10.1016/0038-1101(65)90085-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：585 / +

页数：1

共 16 条

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PROCEEDINGS OF THE IEEE, 1964, 52 (07) :770-+

[3]

CARLSON RF, TO BE PUBLISHED

[4]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P10

[5] QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J].

CHEROFF, G ;

STERN, F ;

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APPLIED PHYSICS LETTERS, 1963, 2 (09) :173-174

[6] CHARACTERISTICS OF CONTINOUS HIGH-POWER GAAS JUNCTION LASER [J].

ENGELER, WE ;

GARFINKEL, M .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1734-&

[7] TEMPERATURE EFFECTS IN COHERENT GAAS DIODES [J].

ENGELER, WE ;

GARFINKEL, M .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2746-&

[8] EFFICIENCY MEASUREMENTS ON GAAS ELECTROLUMINESCENT DIODES [J].

GALGINAITIS, SV .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :295-&

[9]

GALGINAITIS SV, TO BE PUBLISHED

[10] OUTPUT POWER FROM GAAS LASERS AT ROOM TEMPERATURE [J].

GALLAGHER, CC ;

WELCH, JD ;

TANDY, PC ;

GOLDSTEIN, BS .

PROCEEDINGS OF THE IEEE, 1964, 52 (06) :717-&

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