A QUANTITATIVE MODEL FOR THE COUPLED DIFFUSION OF PHOSPHORUS AND POINT-DEFECTS IN SILICON (JOURNAL OF THE ELECTROCHEM SOCIETY, VOL 139, PG 2628, 1992)

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作者：

DUNHAM, S

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 12期

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D O I：

10.1149/1.2152190

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

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页码：3544 / 3544

页数：1

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