INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE OPTICAL-PROPERTIES OF EVAPORATED SILICON FILMS

被引:3
作者
ESQUIVIAS, I
RODRIGUEZ, T
SANZMAUDES, J
SANGRADOR, J
机构
关键词
D O I
10.1016/0040-6090(84)90129-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:L35 / L37
页数:3
相关论文
共 13 条
[1]   STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].
BRODSKY, MH ;
TITLE, RS ;
WEISER, K ;
PETTIT, GD .
PHYSICAL REVIEW B, 1970, 1 (06) :2632-&
[2]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[3]  
ESQUIVIAS I, 1980, 3RD P INT SOL FOR HA, P104
[4]  
ESQUIVIAS I, 1983, THESIS U POLITECNICA
[5]   OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI [J].
FREEMAN, EC ;
PAUL, W .
PHYSICAL REVIEW B, 1979, 20 (02) :716-728
[6]   OPTICAL-PROPERTIES AND STRUCTURE OF AMORPHOUS SILICON FILMS PREPARED BY CVD [J].
JANAI, M ;
ALLRED, DD ;
BOOTH, DC ;
SERAPHIN, BO .
SOLAR ENERGY MATERIALS, 1979, 1 (1-2) :11-27
[7]   OPTICAL INVESTIGATION OF DIFFERENT SILICON FILMS [J].
KUHL, C ;
SCHLOTTERER, H ;
SCHWIDEFSKY, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) :1496-1500
[8]  
Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5
[9]   OPTICAL-PROPERTIES OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON LAYERS [J].
LUBBERTS, G ;
BURKEY, BC ;
MOSER, F ;
TRABKA, EA .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6870-6878
[10]   THE INFLUENCE OF HYDROGEN GAS ON THE CHARACTERISTICS OF AMORPHOUS-SILICON DEPOSITED BY RF SPUTTERING [J].
LUE, JT ;
MEYER, O ;
LOMBAARD, J ;
WANG, RH .
SOLID-STATE ELECTRONICS, 1982, 25 (10) :1011-1016