CARBON-ION-IMPLANTED GALLIUM-ARSENIDE

被引：23

作者：

SHIN, BK ^{[1
]}

机构：

[1] SYST RES LABS INC,DAYTON,OH 45440

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 07期

关键词：

D O I：

10.1063/1.89111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：438 / 440

页数：3

共 15 条

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[4]

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[5]

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MARSH, OJ .

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[8] ANNEAL BEHAVIOR OF DEFECTS IN ION-IMPLANTED GAAS DIODES [J].

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MARSH, OJ .

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[9] ARSENIC AND CADMIUM IMPLANTATIONS INTO N-TYPE GALLIUM ARSENIDE [J].

ITOH, T ;

KUSHIRO, Y .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :5120-+

[10] ION IMPLANTATION OF SILICON .2. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS [J].

MAYER, JW ;

MARSH, OJ ;

SHIFRIN, GA ;

BARON, R .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4073-&

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