Electron spin relaxation control in single electron QDs

被引:0
作者
Mashayekhi, M. Z. [1 ]
Abbasian, K. [1 ]
Shoar-Ghaffari, S. [1 ]
机构
[1] Univ Tabriz, Sch Engn Emerging Technol, Tabriz 51666, Iran
关键词
spin relaxation; spin orbit interaction; Rashba spin-orbit interaction; Dresselhaus spin-orbit interaction; lateral quantum dot;
D O I
10.12989/anr.2013.1.4.203
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
So far, all reviews and control approaches of spin relaxation have been done on lateral single electron quantum dots. In such structures, many efforts have been done, in order to eliminate spin-lattice relaxation, to obtain equal Rashba and linear Dresselhaus parameters. But, ratio of these parameters can be adjustable up to 0.7 in a material like GaAs under high-electric field magnitudes. In this article we have proposed a single electron QD structure, where confinements in all of three directions are considered to be almost identical. In this case the effect of cubic Dresselhaus interaction will have a significant amount, which undermines the linear effect of Dresselhaus while it was destructive in lateral QDs. Then it enhances the ratio of the Rashba and Dresselhaus parameters in the proposed structure as much as required and decreases the spin states up and down mixing and the deviation angle from the net spin-down As a result to the least possible value.
引用
收藏
页码:203 / 210
页数:8
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