MONOLAYER GROWTH AND DIRECT WRITING OF GAAS BY PULSED LASER METALORGANIC VAPOR-PHASE EPITAXY

被引：16
作者：
IWAI, S
MEGURO, T
DOI, A
AOYAGI, Y
NAMBA, S
机构：
[1] Inst of Physical & Chemical, Research, Japan
来源：
THIN SOLID FILMS | 1988年 / 163卷
关键词：
Crystals - Epitaxial Growth - Laser Pulses - Applications - Lithography;
D O I：
10.1016/0040-6090(88)90456-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Atomic layer epitaxy (ALE) of GaAs is achieved by metalorganic vapor phase epitaxy (MOVPE) under irradiation by visible light at 350°C. The self-limiting mechanism for gallium deposition at one atomic layer on an arsenic atomic surface is realized by the selective enhancement of photochemical decomposition for triethylgallium at the arsenic atomic surface. A patterned growth of ALE is obtained by scanning a laser beam in this MOVPE technique.
引用
收藏
页码：405 / 408
页数：4
相关论文
共 7 条
[1]   LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS [J].
AOYAGI, Y ;
MASUDA, S ;
NAMBA, S ;
DOI, A .
APPLIED PHYSICS LETTERS, 1985, 47 (02) :95-96
[2]   LASER SELECTIVE DEPOSITION OF GAAS ON SI [J].
BEDAIR, SM ;
WHISNANT, JK ;
KARAM, NH ;
TISCHLER, MA ;
KATSUYAMA, T .
APPLIED PHYSICS LETTERS, 1986, 48 (02) :174-176
[3]   ATOMIC LAYER EPITAXY OF III-V BINARY COMPOUNDS [J].
BEDAIR, SM ;
TISCHLER, MA ;
KATSUYAMA, T ;
ELMASRY, NA .
APPLIED PHYSICS LETTERS, 1985, 47 (01) :51-53
[4]  
DOI A, 1986, APPL PHYS LETT, V49, P785, DOI 10.1063/1.97546
[5]   MOLECULAR LAYER EPITAXY [J].
NISHIZAWA, J ;
ABE, H ;
KURABAYASHI, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) :1197-1200
[6]  
Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]
[7]   GAAS ATOMIC LAYER EPITAXY BY HYDRIDE VPE [J].
USUI, A ;
SUNAKAWA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03) :L212-L214
1