GAS-PHASE COMPOSITION AND EXTRANEOUS DEPOSITION IN GAAS VAPOR EPITAXY

被引：15
|
作者：
SHAW, DW [1 ]
机构：
[1] TEXAS INSTR INC,DALLAS,TX 75222
来源：
JOURNAL OF CRYSTAL GROWTH | 1976年 / 35卷 / 01期
关键词：
D O I：
10.1016/0022-0248(76)90236-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：1 / 9
页数：9
相关论文
共 50 条
  • [1] MODELING OF CHEMICAL VAPOR-DEPOSITION .2. GAS-PHASE EPITAXY OF (100) GAAS
    KOREC, J
    HEYEN, M
    JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) : 297 - 306
  • [2] COMPOSITION STOICHIOMETRY IN GAAS FILMS GROWN BY THE GAS-PHASE EPITAXY METHOD
    ZHILYAEV, YV
    KYUTT, RN
    NIKITINA, IP
    ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 60 (11): : 201 - 203
  • [3] MASS EXCHANGE DURING GAS-PHASE EPITAXY OF GAAS
    POPOV, VP
    RABINOVICH, VG
    INORGANIC MATERIALS, 1978, 14 (04) : 478 - 482
  • [4] Gas-phase nanoparticle formation during AlGaN metalorganic vapor phase epitaxy
    Creighton, JR
    Breiland, WG
    Coltrin, ME
    Pawlowski, RP
    APPLIED PHYSICS LETTERS, 2002, 81 (14) : 2626 - 2628
  • [5] COMPARISON OF THE OPTICAL CHARACTERISTICS OF ZNSE/GAAS(100) FILMS GROWN BY GAS-PHASE AND PHOTOSTIMULATED GAS-PHASE EPITAXY
    KOVALENKO, AV
    MEKEKECHKO, AY
    TISHCHENKO, VV
    BONDAR, NV
    FIZIKA TVERDOGO TELA, 1994, 36 (05): : 1350 - 1356
  • [6] GAS-PHASE COMPOSITION IN THE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE
    TOBIN, PJ
    PRICE, JB
    CAMPBELL, LM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) : 2222 - 2227
  • [7] EVIDENCE OF A GAS-PHASE TRANSPORT MECHANISM FOR SI INCORPORATION IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS
    GEORGE, T
    WEBER, ER
    NOZAKI, S
    MURRAY, JJ
    WU, AT
    UMENO, M
    APPLIED PHYSICS LETTERS, 1989, 55 (20) : 2090 - 2092
  • [8] VAPOR-PHASE EPITAXY OF GAAS
    RAO, YK
    HAN, HG
    JOURNAL OF METALS, 1987, 39 (10): : A54 - A54
  • [9] A STUDY OF GAS-PHASE TRANSFORMATIONS IN CHEMICAL VAPOR-DEPOSITION
    WU, CH
    KAISER, EW
    TAMOR, MA
    POTTER, TJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1990, 200 : 115 - COLL
  • [10] Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide
    Vorob'ev, AN
    Karpov, SY
    Zhmakin, AI
    Lovtsus, AA
    Makarov, YN
    Krishnan, A
    JOURNAL OF CRYSTAL GROWTH, 2000, 211 (1-4) : 343 - 346
12345