PERSISTENT PHOTOCONDUCTIVITY IN COMPOSITIONAL MODULATED AMORPHOUS-SEMICONDUCTORS

被引：0
作者：
CHEN, KJ
DU, JF
LI, ZF
MAO, GM
CHEN, H
FRITZSCHE, H
机构：
[1] NANJING UNIV,INST SOLID STATE PHYS,NANJING,PEOPLES R CHINA
[2] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 90卷 / 1-3期
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：425 / 428
页数：4
相关论文
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[2]  
CHEN KJ, 1986, B AM PHYS SOC, V31, P333
[3]   PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS [J].
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PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1602-1605
[4]   STUDY OF PERSISTENT PHOTOCONDUCTIVITY EFFECT IN N-TYPE SELECTIVELY DOPED ALGAAS/GAAS HETEROJUNCTION [J].
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HWANG, JCM .
SOLID STATE COMMUNICATIONS, 1984, 51 (05) :317-322
[5]   ILLUMINATION-DOSE DEPENDENCE OF PERSISTENT PHOTOCONDUCTIVITY OF N-GAAS EPITAXIAL LAYERS [J].
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APPLIED PHYSICS, 1980, 23 (02) :121-126
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