PREPARATION OF LA-MODIFIED PBTIO3 THIN-FILMS ON THE OXIDE BUFFER LAYERS WITH NACL-TYPE STRUCTURE

La-modified PbTiO3(PLT: Pb0.9La0.1Ti0.975O3) thin films by rf magnetron sputtering were prepared on the preferred (100)-oriented oxide buffer layers with NaCl-type structure, which were prepared by plasma-enhanced metalorganic chemical vapor deposition. Fused silica, (111)Si, soda-lime glass, and stainless steel were used as the substrates to prepare the oxide buffer layers. The c-axis and a-axis preferred oriented PLT thin films were obtained on the buffer layer, independent of the kind of substrate. Further, highly c-axis oriented PLT thin films were obtained when the substrate had a large thermal expansion coefficient. Significant pyroelectric currents were detected without a poling treatment. The NiCr/PLT/(100)Pt/(100)MgO/stainless steel structure had a dielectric constant of 250, a dielectric loss factor tan delta of 0.8%, and a pyroelectric coefficient of 3.8 X 10(-4) C/M2 K.