SIMULATION OF HOT-ELECTRON TRAPPING AND AGING OF NMOSFETS

被引：30
|
作者：
ROBLIN, P
SAMMAN, A
BIBYK, S
机构：
[1] Ohio State Univ, Columbus, OH, USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期
关键词：
The encouragement and partial support of this research by H. Hilbrink of the NCR Corporation was much appreciated. We are indebted to D. Shupe and J. McKitterick of the Bendix Aerospace Technology Center who suggested the use of the PISCES simulator and generously assisted us in the installation of PISCES II(A); respectively;
D O I：
10.1109/16.8797
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
39
引用
收藏
页码：2229 / 2237
页数：9
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