Gas selectivity of SILAR grown CdS nano-bulk junction

被引：1

作者：

Jayakrishnan, R. ^{[1
]}

Nair, Varun G. ^{[1
]}

Anand, Akhil M. ^{[1
]}

Venugopal, Meera ^{[1
]}

机构：

[1] Christian Coll, Dept Phys, Photovolta Res Ctr, Chengannur 689122, India

来源：

JOURNAL OF SEMICONDUCTORS | 2018年 / 39卷 / 03期

关键词：

Cu/CdS; nano-bulk junction; hydrogen; work function; gas response ratio;

D O I：

10.1088/1674-4926/39/3/033002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Nano-particles of cadmium sulphide were deposited on cleaned copper substrate by an automated sequential ionic layer adsorption reaction (SILAR) system. The grown nano-bulk junction exhibits Schottky diode behavior. The response of the nano-bulk junction was investigated under oxygen and hydrogen atmospheric conditions. The gas response ratio was found to be 198% for Oxygen and 34% for Hydrogen at room temperature. An increase in the operating temperature of the nano-bulk junction resulted in a decrease in their gas response ratio. A logarithmic dependence on the oxygen partial pressure to the junction response was observed, indicating a Temkin isothermal behavior. Work function measurements using a Kelvin probe demonstrate that the exposure to an oxygen atmosphere fails to effectively separate the charges due to the built-in electric field at the interface. Based on the benefits like simple structure, ease of fabrication and response ratio the studied device is a promising candidate for gas detection applications.

引用

页数：6

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