OPTICAL CHARACTERIZATION OF SI1-XCX/SI(0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.014) SEMICONDUCTOR ALLOYS

被引：11

作者：

LEE, HS ^{[1
]}

KURTZ, SR ^{[1
]}

FLORO, JA ^{[1
]}

STRANE, J ^{[1
]}

SEAGER, CH ^{[1
]}

LEE, SR ^{[1
]}

JONES, ED ^{[1
]}

NELSON, JF ^{[1
]}

MAYER, T ^{[1
]}

PICRAUX, ST ^{[1
]}

机构：

[1] SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 10B期

关键词：

PHOTOLUMINESCENCE; SIC ALLOYS; SI SUBSTRATE; SPECTROSCOPIC ELLIPSOMETRY; HYDROGEN PASSIVATION;

D O I：

10.1143/JJAP.34.L1340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have characterized the optical properties of heteroepitexial Si1-xCx/Si(0 less than or equal to x less than or equal to 0.014) alloys grown on Si substrates by solid phase epitaxy using spectroscopic ellipsometry and photoluminescence. The measured dielectric function confirms that the samples are of good crystalline quality. The 14-K photoluminescence spectra of Si1-xCx/Si show several defect peaks. After hydrogen passivation, we observed a new peak near 1.15-1.17 eV which in creases in energy with the incorporation of carbon. We tentatively assign this peak to the no-phonon peak of the Si1-xCx epi-layer. We discuss the alloy shift of the observed spectroscopic features in terms of the C-induced change in the Si indirect band gap.

引用

页码：L1340 / L1343

页数：4

共 17 条

[1]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[2] SILICON-BASED SEMICONDUCTOR HETEROSTRUCTURES - COLUMN-IV BANDGAP ENGINEERING [J].