LOW-PRESSURE DEPOSITION OF DOPED SIO2 BY PYROLYSIS OF TETRAETHYLORTHOSILICATE (TEOS) .2. ARSENIC DOPED FILMS

被引：11
作者：
BECKER, FS
TREICHEL, H
ROHL, S
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 10期
关键词：
D O I：
10.1149/1.2096398
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：3033 / 3043
页数：11
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