CLUSTERING MODEL IN N-DOPED MANY-VALLEY SEMICONDUCTORS

被引:11
作者
FABBRI, M
DASILVA, AF
机构
来源
PHYSICAL REVIEW B | 1984年 / 29卷 / 10期
关键词
D O I
10.1103/PhysRevB.29.5764
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:5764 / 5773
页数:10
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