CLUSTERING MODEL IN N-DOPED MANY-VALLEY SEMICONDUCTORS

被引：11
作者：
FABBRI, M
DASILVA, AF
机构：
来源：
PHYSICAL REVIEW B | 1984年 / 29卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.29.5764
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：5764 / 5773
页数：10
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共 87 条
[1]   SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].
ABRAHAMS, E ;
ANDERSON, PW ;
LICCIARDELLO, DC ;
RAMAKRISHNAN, TV .
PHYSICAL REVIEW LETTERS, 1979, 42 (10) :673-676
[2]   SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J].
ALEXANDER, MN ;
HOLCOMB, DF .
REVIEWS OF MODERN PHYSICS, 1968, 40 (04) :815-+
[3]   LOW-TEMPERATURE MAGNETIC-SUSCEPTIBILITY OF SI-P IN THE NON-METALLIC REGION [J].
ANDRES, K ;
BHATT, RN ;
GOALWIN, P ;
RICE, TM ;
WALSTEDT, RE .
PHYSICAL REVIEW B, 1981, 24 (01) :244-260
[4]   HUBBARD MODEL FOR STRUCTURALLY RANDOM SYSTEM [J].
AOKI, H ;
KAMIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 40 (01) :6-12
[5]  
Berggren K., COMMUNICATION
[6]   BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].
BERGGREN, KF ;
SERNELIUS, BE .
PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986
[7]   DIFFUSION CORRECTIONS TO THE CONDUCTIVITY OF A DISORDERED 3D-ELECTRON GAS [J].
BERGGREN, KF .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (04) :L45-L49
[8]   METAL TO NONMETAL TRANSITIONS IN DOPED GERMANIUM AND SILICON [J].
BERGGREN, KF .
PHILOSOPHICAL MAGAZINE, 1973, 27 (05) :1027-1040
[9]   ENHANCED SPIN SUSCEPTIBILITY IN PHOSPHORUS-DOPED SILICON [J].
BERGGREN, KF .
PHILOSOPHICAL MAGAZINE, 1974, 30 (01) :1-11
[10]  
BERGGREN KF, 1978, METAL NONMETAL TRANS, P399
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