CLUSTERING MODEL IN N-DOPED MANY-VALLEY SEMICONDUCTORS

被引：11
作者：
FABBRI, M
DASILVA, AF
机构：
来源：
PHYSICAL REVIEW B | 1984年 / 29卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.29.5764
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：5764 / 5773
页数：10
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