FORMATION OF BURIED COSI2 BY ION-IMPLANTATION

被引：27

作者：

KOHLHOF, K ^{[1
]}

MANTL, S ^{[1
]}

STRITZKER, B ^{[1
]}

JAGER, W ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, INST FESTKORPERFORSCH, D-5170 JULICH 1, FED REP GER

来源：

APPLIED SURFACE SCIENCE | 1989年 / 38卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90540-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：207 / 216

页数：10

共 27 条

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APPLIED PHYSICS LETTERS, 1989, 54 (03) :244-246

[2]

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[5]

HAYASHI T, 1981, I PHYS C SER, V59, P533

[6] STUDY OF COSI2/SI STRAINED LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

KAO, YC ;

WANG, KL ;

DEFRESART, E ;

HULL, R ;

BAI, G ;

JAMIESON, D ;

NICOLET, MA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :745-748

[7] KINETICS OF COSI2 FROM EVAPORATED SILICON [J].

LIEN, CD ;

NICOLET, MA ;

LAU, SS .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04) :249-251

[8] ELECTRICAL RESISTIVITY STUDY OF LATTICE DEFECTS INTRODUCED IN COPPER BY 1.25-MEV ELECTRON IRRADIATION AT 80-DEGREES-K [J].

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BRINKMAN, JA .

PHYSICAL REVIEW, 1956, 103 (05) :1193-1202

[9] SELF-ALIGNED SILICIDES OR METALS FOR VERY LARGE-SCALE INTEGRATED-CIRCUIT APPLICATIONS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06) :1325-1331

[10]

Ostwald W, 1900, Z PHYS CHEM-STOCH VE, V34, P495

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