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LOCALIZED EPITAXIAL-GROWTH OF C54 AND C49 TISI2 ON (111)SI
被引:52
作者
:
FUNG, MS
论文数:
0
引用数:
0
h-index:
0
FUNG, MS
CHENG, HC
论文数:
0
引用数:
0
h-index:
0
CHENG, HC
CHEN, LJ
论文数:
0
引用数:
0
h-index:
0
CHEN, LJ
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1985年
/ 47卷
/ 12期
关键词
:
D O I
:
10.1063/1.96263
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1312 / 1314
页数:3
相关论文
共 28 条
[1]
ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION
[J].
AMANO, J
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,CORVALLIS,OR 97330
HEWLETT PACKARD CO,CORVALLIS,OR 97330
AMANO, J
;
MERCHANT, P
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,CORVALLIS,OR 97330
HEWLETT PACKARD CO,CORVALLIS,OR 97330
MERCHANT, P
;
KOCH, T
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,CORVALLIS,OR 97330
HEWLETT PACKARD CO,CORVALLIS,OR 97330
KOCH, T
.
APPLIED PHYSICS LETTERS,
1984,
44
(08)
:744
-746
[2]
METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS
[J].
BEYERS, R
论文数:
0
引用数:
0
h-index:
0
BEYERS, R
;
SINCLAIR, R
论文数:
0
引用数:
0
h-index:
0
SINCLAIR, R
.
JOURNAL OF APPLIED PHYSICS,
1985,
57
(12)
:5240
-5245
[3]
CO2SI, CRSI2, ZRSI2 AND TISI2 FORMATION STUDIED BY A RADIOACTIVE SI-31 MARKER TECHNIQUE
[J].
BOTHA, AP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STELLENBOSCH,DEPT PHYS,DIV SOLID STATE,STELLENBOSCH 7600,SOUTH AFRICA
UNIV STELLENBOSCH,DEPT PHYS,DIV SOLID STATE,STELLENBOSCH 7600,SOUTH AFRICA
BOTHA, AP
;
PRETORIUS, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STELLENBOSCH,DEPT PHYS,DIV SOLID STATE,STELLENBOSCH 7600,SOUTH AFRICA
UNIV STELLENBOSCH,DEPT PHYS,DIV SOLID STATE,STELLENBOSCH 7600,SOUTH AFRICA
PRETORIUS, R
.
THIN SOLID FILMS,
1982,
93
(1-2)
:127
-133
[4]
GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON
[J].
BOWER, RW
论文数:
0
引用数:
0
h-index:
0
BOWER, RW
;
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
.
APPLIED PHYSICS LETTERS,
1972,
20
(09)
:359
-&
[5]
CHEN JY, 1984, SOLID STATE TECHNOL, V27, P145
[6]
EFFECTS OF 2-STEP ANNEALING ON THE EPITAXIAL-GROWTH OF COSI2 ON SILICON
[J].
CHEN, LJ
论文数:
0
引用数:
0
h-index:
0
CHEN, LJ
;
CHANG, TT
论文数:
0
引用数:
0
h-index:
0
CHANG, TT
.
THIN SOLID FILMS,
1983,
104
(1-2)
:183
-189
[7]
INTERFACIAL REACTIONS OF IRON THIN-FILMS ON SILICON
[J].
CHENG, HC
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN
NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN
CHENG, HC
;
YEW, TR
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN
NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN
YEW, TR
;
CHEN, LJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN
NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN
CHEN, LJ
.
JOURNAL OF APPLIED PHYSICS,
1985,
57
(12)
:5246
-5250
[8]
EPITAXIAL-GROWTH OF ZRSI2 ON SILICON WITH AN ION-BEAM MIXING ASSISTED SCHEME
[J].
CHENG, HC
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
CHENG, HC
;
CHEN, LJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
CHEN, LJ
.
APPLIED PHYSICS LETTERS,
1985,
46
(06)
:562
-564
[9]
EPITAXIAL-GROWTH OF VSI2 ON (111)SI
[J].
CHIEN, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
CHIEN, CJ
;
CHENG, HC
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
CHENG, HC
;
NIEH, CW
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NIEH, CW
;
CHEN, LJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
CHEN, LJ
.
JOURNAL OF APPLIED PHYSICS,
1985,
57
(06)
:1887
-1889
[10]
TITANIUM SILICIDE FORMATION ON BF2+-IMPLANTED SILICON
[J].
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
CHOW, TP
;
KATZ, W
论文数:
0
引用数:
0
h-index:
0
机构:
GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
KATZ, W
;
SMITH, G
论文数:
0
引用数:
0
h-index:
0
机构:
GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
SMITH, G
.
APPLIED PHYSICS LETTERS,
1985,
46
(01)
:41
-43
←
1
2
3
→
共 28 条
[1]
ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION
[J].
AMANO, J
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,CORVALLIS,OR 97330
HEWLETT PACKARD CO,CORVALLIS,OR 97330
AMANO, J
;
MERCHANT, P
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,CORVALLIS,OR 97330
HEWLETT PACKARD CO,CORVALLIS,OR 97330
MERCHANT, P
;
KOCH, T
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,CORVALLIS,OR 97330
HEWLETT PACKARD CO,CORVALLIS,OR 97330
KOCH, T
.
APPLIED PHYSICS LETTERS,
1984,
44
(08)
:744
-746
[2]
METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS
[J].
BEYERS, R
论文数:
0
引用数:
0
h-index:
0
BEYERS, R
;
SINCLAIR, R
论文数:
0
引用数:
0
h-index:
0
SINCLAIR, R
.
JOURNAL OF APPLIED PHYSICS,
1985,
57
(12)
:5240
-5245
[3]
CO2SI, CRSI2, ZRSI2 AND TISI2 FORMATION STUDIED BY A RADIOACTIVE SI-31 MARKER TECHNIQUE
[J].
BOTHA, AP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STELLENBOSCH,DEPT PHYS,DIV SOLID STATE,STELLENBOSCH 7600,SOUTH AFRICA
UNIV STELLENBOSCH,DEPT PHYS,DIV SOLID STATE,STELLENBOSCH 7600,SOUTH AFRICA
BOTHA, AP
;
PRETORIUS, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STELLENBOSCH,DEPT PHYS,DIV SOLID STATE,STELLENBOSCH 7600,SOUTH AFRICA
UNIV STELLENBOSCH,DEPT PHYS,DIV SOLID STATE,STELLENBOSCH 7600,SOUTH AFRICA
PRETORIUS, R
.
THIN SOLID FILMS,
1982,
93
(1-2)
:127
-133
[4]
GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON
[J].
BOWER, RW
论文数:
0
引用数:
0
h-index:
0
BOWER, RW
;
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
.
APPLIED PHYSICS LETTERS,
1972,
20
(09)
:359
-&
[5]
CHEN JY, 1984, SOLID STATE TECHNOL, V27, P145
[6]
EFFECTS OF 2-STEP ANNEALING ON THE EPITAXIAL-GROWTH OF COSI2 ON SILICON
[J].
CHEN, LJ
论文数:
0
引用数:
0
h-index:
0
CHEN, LJ
;
CHANG, TT
论文数:
0
引用数:
0
h-index:
0
CHANG, TT
.
THIN SOLID FILMS,
1983,
104
(1-2)
:183
-189
[7]
INTERFACIAL REACTIONS OF IRON THIN-FILMS ON SILICON
[J].
CHENG, HC
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN
NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN
CHENG, HC
;
YEW, TR
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN
NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN
YEW, TR
;
CHEN, LJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN
NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN
CHEN, LJ
.
JOURNAL OF APPLIED PHYSICS,
1985,
57
(12)
:5246
-5250
[8]
EPITAXIAL-GROWTH OF ZRSI2 ON SILICON WITH AN ION-BEAM MIXING ASSISTED SCHEME
[J].
CHENG, HC
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
CHENG, HC
;
CHEN, LJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
CHEN, LJ
.
APPLIED PHYSICS LETTERS,
1985,
46
(06)
:562
-564
[9]
EPITAXIAL-GROWTH OF VSI2 ON (111)SI
[J].
CHIEN, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
CHIEN, CJ
;
CHENG, HC
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
CHENG, HC
;
NIEH, CW
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NIEH, CW
;
CHEN, LJ
论文数:
0
引用数:
0
h-index:
0
机构:
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN
CHEN, LJ
.
JOURNAL OF APPLIED PHYSICS,
1985,
57
(06)
:1887
-1889
[10]
TITANIUM SILICIDE FORMATION ON BF2+-IMPLANTED SILICON
[J].
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
CHOW, TP
;
KATZ, W
论文数:
0
引用数:
0
h-index:
0
机构:
GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
KATZ, W
;
SMITH, G
论文数:
0
引用数:
0
h-index:
0
机构:
GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
SMITH, G
.
APPLIED PHYSICS LETTERS,
1985,
46
(01)
:41
-43
←
1
2
3
→