INFLUENCE OF HIGH-DOSE GAMMA-IRRADIATION ON ELECTRON-MOBILITY IN A SILICON INVERSION LAYER

被引：2

作者：

MAJKUSIAK, B

JAKUBOWSKI, A

GRIGOROV, K

BALASINSKI, A

机构：

[1] Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00-662 Warsaw

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 16期

关键词：

D O I：

10.1063/1.104074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An influence of high-dose γ irradiation on the dependence of electron mobility on transverse electric field in the silicon surface inversion layer is experimentally determined and considered.

引用

页码：1643 / 1644

页数：2

共 8 条

[1] EFFECT OF IRRADIATION ON CARRIER MOBILITY IN INVERSION LAYERS OF MOS STRUCTURES [J].

GIRII, VA ;

KONDRACHUK, AV ;

KORNYUSH.SI ;

LITVINOV, RO ;

SHAKHOVTSOV, VI .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 22 (01) :357-362

[2] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS [J].

HARTSTEIN, A ;

NING, TH ;

FOWLER, AB .

SURFACE SCIENCE, 1976, 58 (01) :178-181

[3] A MODIFIED METHOD FOR DETERMINATION OF SURFACE MOBILITY OF CARRIERS IN MOS-TRANSISTORS [J].

MAJKUSIAK, B .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 116 (02) :833-836

[4]

SABNIS AG, 1979, IEDM TECH DIG, P18

[5] SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE [J].

SAH, CT ;

TSCHOPP, LL ;

NING, TH .

SURFACE SCIENCE, 1972, 32 (03) :561-&

[6] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].

SUN, SC ;

PLUMMER, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1497-1508

[7]

Takagi S., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P398, DOI 10.1109/IEDM.1988.32840

[8] TOTAL DOSE EFFECTS ON SURFACE-STATE DENSITY, CARRIER CONCENTRATION AND MOBILITY IN MOS LAYERS [J].

WHITEFIELD, JE ;

SOUTHWARD, HD ;

MAIER, RJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1549-1553

← 1 →