TECHNIQUES TO MINIMIZE DX CENTER DELETERIOUS EFFECTS IN III-V DEVICE PERFORMANCE

被引:36
作者
MUNOZ, E
CALLEJA, E
IZPURA, I
GARCIA, F
ROMERO, AL
SANCHEZROJAS, JL
POWELL, AL
CASTAGNE, J
机构
[1] UNIV SHEFFIELD,DEPT ELECT ENGN,SERC III-V CENT FACIL,SHEFFIELD S1 SJD,ENGLAND
[2] PICOGIGA,F-91940 LES ULIS,FRANCE
关键词
D O I
10.1063/1.353818
中图分类号
O59 [应用物理学];
学科分类号
摘要
The properties of deep donor states (DX centers) in III-V alloys are discussed in relation to their influence on device characteristics and performance. The techniques to avoid or minimize such deleterious effects in AlGaAs-based devices are discussed, along with their physical basis, and some guidelines for improved III-V device design are established. New results about the benefits of proper donor selection, the role of In alloying, the advantage of delta doping in layers and in modulation-doped devices, and the use of AlInAs and InGaP as alternative wide band-gap III-V alloys are presented.
引用
收藏
页码:4988 / 4997
页数:10
相关论文
共 49 条
[1]   DX CENTERS IN SELECTIVELY SI-DOPED GAAS-ALAS SUPERLATTICES [J].
ABABOU, S ;
MARCHAND, JJ ;
MAYET, L ;
GUILLOT, G ;
MOLLOT, F .
SUPERLATTICES AND MICROSTRUCTURES, 1990, 7 (04) :283-285
[2]   CHARACTERIZATION OF DX CENTERS IN SELECTIVELY DOPED GAAS-ALAS SUPERLATTICES [J].
ABABOU, S ;
MARCHAND, JJ ;
MAYET, L ;
GUILLOT, G ;
MOLLOT, F .
APPLIED PHYSICS LETTERS, 1990, 57 (13) :1321-1323
[3]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[4]   ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J].
BABA, T ;
MIZUTANI, T ;
OGAWA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L627-L629
[5]   ELIMINATION OF A DX-CENTER BY AN AlAs/n-GaAs SUPERLATTICE AND ITS APPLICATION TO 2DEGFETs. [J].
Baba, Toshio .
1986, (04)
[6]   DEGRADATION-FREE MODULATION-DOPED FIELD-EFFECT TRANSISTORS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].
BHAT, R ;
CHAN, WK ;
KASTALSKY, A ;
KOZA, MA ;
DAVISSON, PS .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1344-1346
[7]   SUPPRESSION OF DX CENTERS IN GAALAS-GAAS HETEROSTRUCTURES [J].
BOURGOIN, JC ;
FENG, SL ;
STIEVENARD, D ;
LETARTRE, X ;
BARBIER, E ;
HIRTZ, JP .
APPLIED PHYSICS LETTERS, 1989, 54 (12) :1115-1117
[8]  
BOURGOIN JC, 1989, PHYSICS DX CTR GAAS, V10
[9]   DIRECT EVIDENCE OF THE DX CENTER LINK TO THE L-CONDUCTION-BAND MINIMUM IN GAALAS [J].
CALLEJA, E ;
GOMEZ, A ;
MUNOZ, E .
APPLIED PHYSICS LETTERS, 1988, 52 (05) :383-385
[10]  
CALLEJA E, 1989, PHYSICS DX CTR GAAS, V10, P73