MICRODOSIMETRIC ANALYSIS OF PROTON-INDUCED REACTIONS IN SILICON AND GALLIUM-ARSENIDE

被引：17

作者：

FARRELL, GE ^{[1
]}

MCNULTY, PJ ^{[1
]}

ABDELKADER, W ^{[1
]}

机构：

[1] CLARKSON UNIV,DEPT PHYS,POTSDAM,NY 13676

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333458

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1073 / 1077

页数：5

共 11 条

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[6] CHARGE-DEPOSITION SPECTRA IN THIN SLABS OF SILICON INDUCED BY ENERGETIC PROTONS [J].

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[7] MICRODOSIMETRIC ASPECTS OF PROTON-INDUCED NUCLEAR-REACTIONS IN THIN-LAYERS OF SILICON [J].

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MCNULTY, PJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2012-2016

[8]

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[9]

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MCNULTY, PJ ;

FARRELL, GE ;

TUCKER, WP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4007-4012

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