CHARACTERISTICS OF MICROPLASMAS IN HIGH-VOLTAGE SILICON P-N-JUNCTIONS

被引：0

作者：

KUZMIN, VA ^{[1
]}

KRYUKOVA, NN ^{[1
]}

KYUREGYAN, AS ^{[1
]}

SOROKIN, YG ^{[1
]}

机构：

[1] VI LENIN ELECT ENGN INST,MOSCOW,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：766 / 769

页数：4

共 50 条

[21] FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES
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[22] POLYCRYSTALLINE SILICON P-N-JUNCTIONS
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[23] INHOMOGENEITIES IN SILICON P-N-JUNCTIONS
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[27] INVESTIGATION OF THE ELECTRICAL FIELDS IN HIGH-VOLTAGE SILICON P+-N-N+ JUNCTIONS
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[28] DELAY OF MICROPLASMA BREAKDOWN IN HIGH-VOLTAGE P-N JUNCTIONS IN SILICON
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