ELECTRON-HOLE DROPS IN SILICON

被引：15

作者：

CAPIZZI, M

VOOS, M

BENOITALAGUILLAUME, C

MCGRODDY, JC

机构：

[1] CNRS,GRP PHYS SOLIDES,TOUR 23,2 PL JUSSIEU,PARIS,FRANCE

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1016/0038-1098(75)90058-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：709 / 712

页数：4

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