A STACKED DIELECTRIC FILM FOR A SILICON MICROSTRIP DETECTOR

被引：8

作者：

OKUNO, S ^{[1
]}

IKEDA, H ^{[1
]}

AKAMINE, T ^{[1
]}

SAITOH, Y ^{[1
]}

KADOI, K ^{[1
]}

KOJIMA, Y ^{[1
]}

机构：

[1] SEIKO INSTRUMENTS INC,MATSUDO,CHIBA 271,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 361卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(95)00131-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Stacked dielectric films have been developed so as to be applied to a silicon microstrip detector (SSD). We expected that these stacked films would have superior properties for an integrated capacitor in terms of a high dielectric breakdown characteristic, reliability, a large capacitance and radiation hardness. We measured the capacitance and leakage current for test capacitors with single-layered silicon dioxide (SiO2), single-layered silicon nitride (Si3N4), NO (Si3N4-SiO2), ON (SiO2-Si3N4) and ONO (SiO2-Si3N4-SiO2).

引用

页码：91 / 96

页数：6

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