ELECTRONIC-PROPERTIES AND BAND SCHEMES IN AMORPHOUS-SEMICONDUCTORS .1. FUNDAMENTAL-CONCEPTS

In this first part, we present the theoretical basis proposed by Mott on amorphous semiconductors: the wave functions describing the Mott-Anderson potential are deduced from the available values of the mean free path calculated by Ioffe and Regel. In the case where localized states appear, we verify that the corresponding wave functions are consistent with the definition of the Mott localisation: so we present the general formalism leading for the conductivity at the Kubo-Greenwood formula and at the particular expression of Mott. Finally, we present with their interpretation the successive schemes for the band structure of amorphous semiconductors.