A NOVEL TECHNIQUE FOR INSITU MEASUREMENTS OF THIN-FILM PROPERTIES

[1] MEAN FREE-PATH AND DENSITY OF CONDUCTANCE ELECTRONS IN PLATINUM DETERMINED BY THE SIZE EFFECT IN EXTREMELY THIN-FILMS [J]. PHYSICAL REVIEW B, 1980, 22 (12): : 6065 - 6073

[2] The conductivity of thin metallic films according to the electron theory of metals [J]. PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1938, 34 : 100 - 108

[3] HIEBER K, 1982, SIEMENS FORSCH ENTW, V11, P145

[4] STRUCTURAL-CHANGES OF EVAPORATED TANTALUM DURING FILM GROWTH [J]. THIN SOLID FILMS, 1982, 90 (01) : 43 - 50

[5] HOFFMANN H, 1981, THIN SOLID FILMS, V85, P147, DOI 10.1016/0040-6090(81)90627-1

[6] HOFFMANN H, 1983, 9TH P INT VAC C 5TH, P351

[7] REACTIVE ION ETCHING OF TA-SILICIDE POLYSILICON DOUBLE-LAYERS FOR THE FABRICATION OF INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 15 - 22

[8] MAYER NM, 1982, SIEMENS FORSCH ENTW, V11, P322

[9] MURARKA SP, 1983, SILICIDES VLSI APPL, P95

[10] RESISTIVITY AND TEMPERATURE COEFFICIENT OF THIN METAL FILMS WITH ROUGH SURFACE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (11) : 1326 - &

[1] MEAN FREE-PATH AND DENSITY OF CONDUCTANCE ELECTRONS IN PLATINUM DETERMINED BY THE SIZE EFFECT IN EXTREMELY THIN-FILMS [J]. PHYSICAL REVIEW B, 1980, 22 (12): : 6065 - 6073

[2] The conductivity of thin metallic films according to the electron theory of metals [J]. PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1938, 34 : 100 - 108

[3] HIEBER K, 1982, SIEMENS FORSCH ENTW, V11, P145

[4] STRUCTURAL-CHANGES OF EVAPORATED TANTALUM DURING FILM GROWTH [J]. THIN SOLID FILMS, 1982, 90 (01) : 43 - 50

[5] HOFFMANN H, 1981, THIN SOLID FILMS, V85, P147, DOI 10.1016/0040-6090(81)90627-1

[6] HOFFMANN H, 1983, 9TH P INT VAC C 5TH, P351

[7] REACTIVE ION ETCHING OF TA-SILICIDE POLYSILICON DOUBLE-LAYERS FOR THE FABRICATION OF INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 15 - 22

[8] MAYER NM, 1982, SIEMENS FORSCH ENTW, V11, P322

[9] MURARKA SP, 1983, SILICIDES VLSI APPL, P95

[10] RESISTIVITY AND TEMPERATURE COEFFICIENT OF THIN METAL FILMS WITH ROUGH SURFACE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (11) : 1326 - &