A SPECIFIC TRAP LEVEL AT 78 MEV IN UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GROWN GAAS-SI MATERIALS

被引：17
作者：
FILLARD, JP
CASTAGNE, M
BONNAFE, J
DEMURCIA, M
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 11期
关键词：
D O I：
10.1063/1.331872
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：6767 / 6770
页数：4
相关论文
共 20 条
[1]   COLLECTIVE INVESTIGATIONS ON 2 TYPICAL SEMI-INSULATING GAAS INGOTS [J].
BONNAFE, J ;
CASTAGNE, M ;
CLERJAUD, B ;
DEVEAUD, B ;
FAVENNEC, PN ;
FILLARD, JP ;
GAUNEAU, M ;
GOLTZENE, A ;
GUENAIS, B ;
GUILLOT, G ;
HENNEL, AM ;
HUBER, AM ;
JOUGLAR, J ;
LEYRAL, P ;
MANIFACIER, JC ;
MARTINEZ, G ;
PICOLI, G ;
ROIZES, A ;
SCHWAB, C ;
VISENTIN, N ;
VUILLERMOZ, PL .
MATERIALS RESEARCH BULLETIN, 1981, 16 (10) :1193-1212
[2]   VERY LOW-TEMPERATURE TSC TRAP SPECTROSCOPY [J].
BONNAFE, J ;
CASTAGNE, M ;
ROMESTAN, J ;
FILLARD, JP .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (18) :2465-2472
[3]  
CASTAGNE M, 1980, J PHYS C, V13, P449
[4]   INFRARED-ABSORPTION OF THE 78-MEV ACCEPTOR IN GAAS [J].
ELLIOTT, KR ;
HOLMES, DE ;
CHEN, RT ;
KIRKPATRICK, CG .
APPLIED PHYSICS LETTERS, 1982, 40 (10) :898-901
[5]  
FAIRMAN RD, 1980, SEMIINSULATING 3 5 M
[6]  
HOBGOOD HM, 1982, SEMIINSULATING 3 5 M
[7]   STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].
HOLMES, DE ;
CHEN, RT ;
ELLIOTT, KR ;
KIRKPATRICK, CG .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48
[8]  
HOLMES DE, 1982, SEMIINSULATING 3 5 M
[9]  
Lang D.V., 1979, TOP APPL PHYS, P93, DOI 10.1007/3540095950_9
[10]   STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
LANG, DV ;
CHO, AY ;
GOSSARD, AC ;
ILEGEMS, M ;
WIEGMANN, W .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2558-2564
12