ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS/GAAS SURFACE EMITTING JUNCTION LASER

被引：24

作者：

IGA, K ^{[1
]}

ISHIKAWA, S ^{[1
]}

OHKOUCHI, S ^{[1
]}

NISHIMURA, T ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,OPTOELECTR RES LABS,KAWASAKI,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 06期

关键词：

D O I：

10.1109/JQE.1985.1072726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：663 / 668

页数：6

共 13 条

[1] PULSED OSCILLATION OF GAALAS/GAAS SURFACE-EMITTING INJECTION-LASER [J].

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IGA, K .

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[2]

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[3] LASING CHARACTERISTICS OF IMPROVED GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].

IGA, K ;

SODA, H ;

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SHIMIZU, S .

ELECTRONICS LETTERS, 1983, 19 (13) :457-458

[4] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS GAAS SURFACE EMITTING INJECTION-LASER [J].

IGA, K ;

ISHIKAWA, S ;

OHKOUCHI, S ;

NISHIMURA, T .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :348-350

[5]

KOTAKI Y, 1984, 16 C SOL STAT DEV MA, P133

[6] CURRENT DEPENDENCE OF SPONTANEOUS CARRIER LIFETIMES IN GAAS-GA1-CHIALCHI AS DOUBLE-HETEROSTRUCTURE LASERS [J].

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ISHII, M ;

ITO, A .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :486-487

[7] GAINASP-INP SURFACE EMITTING INJECTION-LASER WITH BURIED HETEROSTRUCTURES [J].

OKUDA, H ;

SODA, H ;

MORIKI, K ;

MOTEGI, Y ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L563-L566

[8] ADDITIONAL DATA ON EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS-ALX GA1-XAS DOUBLE-HETEROSTRUCTURE LASERS [J].

PINKAS, E ;

MILLER, BI ;

HAYASHI, I ;

FOY, PW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :281-282

[9] GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].

SODA, H ;

IGA, K ;

KITAHARA, C ;

SUEMATSU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) :2329-2330

[10]

SODA H, 1983, JAPAN J APPL PH S221, V22, P235

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