ELECTRON-DIFFUSION LENGTHS IN PARA-TYPE INP INVOLVED IN INDIUM TIN OXIDE PARA-INP SOLAR-CELLS

被引：13

作者：

GOUSKOV, L ^{[1
]}

LUQUET, H ^{[1
]}

SOONCKINDT, L ^{[1
]}

OEMRY, A ^{[1
]}

BOUSTANI, M ^{[1
]}

NGUYEN, PH ^{[1
]}

机构：

[1] ISIN,LEPI PARC R BEUTZ,F-54500 VANDOEUVRE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.330048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7014 / 7019

页数：6

共 15 条

[1] MEASUREMENTS OF SUB-MICRON HOLE DIFFUSION LENGTHS IN GAAS BY A PHOTO-VOLTAIC TECHNIQUE [J].

DORANTESDAVILA, J ;

LASTRASMARTINEZ, A ;

RACCAH, PM .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :442-444

[2] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) :2550-&

[3] N-ITO/P INP - A PHOTO AND ELECTROLUMINESCENT DIODE [J].

GOUSKOV, L ;

LUQUET, H ;

GRIL, C ;

OEMRY, A ;

SAVELLI, M .

REVUE DE PHYSIQUE APPLIQUEE, 1982, 17 (03) :125-132

[4] NORMAL (INDIUM TIN OXIDE) PARA-INP SOLAR-CELLS [J].

GOUSKOV, L ;

LUQUET, H ;

ESTA, J ;

GRIL, C .

SOLAR CELLS, 1981, 5 (01) :51-66

[5]

Hovel HJ, 1975, SEMICONDUCTORS SEMIM, VII

[6] MINORITY-CARRIER DIFFUSION LENGTH MEASUREMENTS IN CDTE BY A PHOTOCURRENT TECHNIQUE [J].

LASTRASMARTINEZ, A ;

RACCAH, PM ;

TRIBOULET, R .

APPLIED PHYSICS LETTERS, 1980, 36 (06) :469-471

[7] DIFFUSION LENGTH MEASUREMENTS IN SCHOTTKY-BARRIER GAAS SOLAR-CELLS [J].

LENDER, RJ ;

TIWARI, S ;

BORREGO, JM ;

GHANDHI, SK .

SOLID-STATE ELECTRONICS, 1979, 22 (02) :213-214

[8] DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN INDIUM-PHOSPHIDE BY SURFACE PHOTOVOLTAGE MEASUREMENT [J].

LI, SS .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :126-127

[9] SEMICONDUCTOR PROFILING USING AN OPTICAL PROBE [J].

LILE, DL ;

DAVIS, NM .

SOLID-STATE ELECTRONICS, 1975, 18 (7-8) :699-&

[10] MINORITY-CARRIERS DIFFUSION LENGTH IN ZNSE BY SPV METHOD [J].

MORA, S ;

ROMEO, N ;

TARRICONE, L .

SOLID STATE COMMUNICATIONS, 1980, 33 (11) :1147-1149

← 1 2 →