CONTACTLESS MEASUREMENT OF SURFACE-TEMPERATURE AND SURFACE-POTENTIAL OF SI BY PHOTOREFLECTANCE SPECTROSCOPY

被引：11

作者：

FUJIMOTO, A ^{[1
]}

KATSUMI, H ^{[1
]}

OKUYAMA, M ^{[1
]}

HAMAKAWA, Y ^{[1
]}

机构：

[1] WAKAYAMA NATL COLL TECHNOL,DEPT ELECT ENGN,GOBO,WAKAYAMA 644,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

SI; CHARACTERIZATION; SURFACE TEMPERATURE; TEMPERATURE DISTRIBUTION; SURFACE POTENTIAL; PHOTOREFLECTANCE;

D O I：

10.1143/JJAP.34.804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface temperature and surface potential of Si wafers have been measured by photoreflectance (PR) spectroscopy. The surface temperature was obtained in the range from 25 degrees C to 134 degrees C within the error of +/-0.6 degrees C from transition energy which was calculated from the PR spectrum by the 3-point method based on 3rd derivative theory. spatial distribution of surface temperature was also measured successfully in a Si wafer heated partially. Surface potential was estimated by comparison of experimental PR spectral intensity with theoretical values, taking into account photoinduced change of the surface field. The results show that the surface potential of Si wafers varies with temperature in the atmosphere.

引用

页码：804 / 807

页数：4

共 8 条

[1]

Aspnes D.E., Handbook of Semiconductors, 2, (1980)

[2]

Dafesh P.A., J. Appl. Phys, 71, (1992)

[3]

Glembocki O.J., Shanabrook B.V., Bottka N., Beard W.T., Comas J., Appl. Phys. Lett, 46, (1985)

[4]

Reddy U.K., Ji G., Henderson T., Morkoc H., Schulman J.N., J. Appl. Phys, 62, (1987)

[5]

Shanabrook B.V., Glembocki O.J., Beard W.T., Phys. Rev.B, 35, (1986)

[6]

Bernussi A.A., Likawa F., Motisuke P., Basmaji P., Siu Li M., Hipolito O., J. Appl. Phys., 67, (1990)

[7]

Aspnes D.E., Surf. Sci, 37, (1967)

[8]

Kanata T., Matsunaga M., Takakura H., Hamakawa Y., Nishino T., J. Appl. Phys, 68, (1990)

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