ELECTRICAL TRANSPORT-PROPERTIES OF V3SI, V5SI3, AND VSI2 THIN-FILMS

被引：34
作者：
NAVA, F [1 ]
BISI, O [1 ]
TU, KN [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
PHYSICAL REVIEW B | 1986年 / 34卷 / 09期
关键词：
D O I：
10.1103/PhysRevB.34.6143
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6143 / 6150
页数：8
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