RECOMBINATION RADIATION ASSOCIATED WITH HIGH-VOLTAGE SWITCHING IN GAAS DOUBLE-BOND CR SYMMETRIC STRUCTURES

被引:0
作者
BRODOVOI, VA [1 ]
GOZAK, AC [1 ]
PEKA, GP [1 ]
机构
[1] TG SHEVCHENKO STATE UNIV,KIEV,UKSSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 8卷 / 05期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
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页码:642 / 643
页数:2
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[31]   High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n junctions: I. Physics of the switching process [J].
Kyuregyan, A. S. .
SEMICONDUCTORS, 2017, 51 (09) :1208-1213
[32]   Cut-Off Degradation of Output Current Induced by High Fluence Neutron Radiation in High-Voltage Silicon-on-Insulator Lateral Double-Diffused MOSFET [J].
Wang, Ruidi ;
Qiao, Ming ;
Wang, Yibing ;
Zhou, Xin ;
Li, Zhaoji ;
Zhang, Bo .
IEEE ELECTRON DEVICE LETTERS, 2022, 43 (01) :108-111
[33]   Room-temperature current-voltage characteristics in AlAs-GaAs-AlAs double-barrier structures: Calculations using a bond-orbital model [J].
Shyu, JS ;
Chiang, JC .
PHYSICAL REVIEW B, 1999, 60 (03) :1799-1806
[34]   THEORETICAL-STUDIES ON CARBOMETALATION OF CYCLOPROPENE - TRANSITION STRUCTURES OF ADDITION OF ME-, MELI, MECU, AND ME2CU- AND ORIGIN OF THE HIGH REACTIVITY OF THE STRAINED DOUBLE-BOND [J].
NAKAMURA, E ;
NAKAMURA, M ;
MIYACHI, Y ;
KOGA, N ;
MOROKUMA, K .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1993, 115 (01) :99-106
[35]   Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage [J].
Tsai, Jung-Hui ;
Chiu, Shao-Yen ;
Lour, Wen-Shiung ;
Guo, Der-Feng ;
Liu, Wen-Chau .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (08) :1132-1138