NUMERICAL-ANALYSIS OF SMALL-SIGNAL CHARACTERISTICS OF A FULLY DEPLETED SOI MOSFET

被引：3
作者：
YANG, PC [1 ]
LI, SS [1 ]
机构：
[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 07期
关键词：
D O I：
10.1016/0038-1101(93)90107-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on the small-signal model of bulk MOSFETs, a counterpart equivalent circuit model for the fully depleted SOI MOSFET is developed by emphasizing the structural uniqueness of the device. Under quasistatic operation conditions, the model parameters valid for all regions of operation, including weak and moderate inversion, are derived and computed by using the theories proposed recently[6]. The numerical simulations for both the depleted and accumulated back surfaces are presented, and the results are compared with those from the strong-inversion theory.
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收藏
页码：939 / 944
页数：6
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