ELECTRON AND HOLE DRIFT MOBILITY IN AMORPHOUS SELENIUM-BASED PHOTORECEPTORS

被引：0
作者：
JUHASZ, C
VAEZINEJAD, SM
KASAP, SO
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JOURNAL OF IMAGING SCIENCE | 1985年 / 29卷 / 04期
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TB8 [摄影技术];
学科分类号：
0804 ;
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页码：144 / 147
页数：4
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共 24 条
[1]   XEROGRAPHIC SPECTROSCOPY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS [J].
ABKOWITZ, M ;
ENCK, RC .
PHYSICAL REVIEW B, 1982, 25 (04) :2567-2577
[2]   RELAXATION INDUCED CHANGES IN ELECTRICAL BEHAVIOR OF GLASSY CHALCOGENIDE SEMICONDUCTORS [J].
ABKOWITZ, M .
POLYMER ENGINEERING AND SCIENCE, 1984, 24 (14) :1149-1154
[3]   EFFECT OF MONO-VALENT DOPANTS ON THE ELECTRICAL BEHAVIOR OF A-SE [J].
ABKOWITZ, M ;
JANSEN, F ;
ROBINETTE, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :875-876
[4]  
ABKOWITZ M, 1983, PHYS REV B, V27, P7401
[5]  
BERGER SB, 1979, PHYSICS SELENIUM TEL
[6]  
CHEUNG L, 1982, PHOTOGR SCI ENG, V26, P245
[7]  
Das G. C., 1972, J NON-CRYST SOLIDS, V7, P251, DOI [10.1016/0022-3093(72)90026-9, DOI 10.1016/0022-3093(72)90026-9]
[8]  
ENCK RC, 1976, PHOTOCONDUCTIVITY RE, pCH7
[9]   SATICON - NEW PHOTOCONDUCTIVE CAMERA TUBE WITH SE-AS-TE TARGET [J].
GOTO, N ;
ISOZAKI, Y ;
SHIDARA, K ;
MARUYAMA, E ;
HIRAI, T ;
FUJITA, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) :662-666
[10]   DEEP-TRAPPING KINEMATICS [J].
KANAZAWA, KK ;
BATRA, IP .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1845-+
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