VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD

被引：25

作者：

RAZEGHI, M

HERSEE, S

HIRTZ, P

BLONDEAU, R

DECREMOUX, B

DUCHEMIN, JP

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 09期

关键词：

D O I：

10.1049/el:19830232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：336 / 337

页数：2

共 7 条

[1]

[Anonymous], 1977, SEMICONDUCTOR LASERS

[2] NEAR-EQUILIBRIUM LPE GROWTH OF LOW THRESHOLD CURRENT-DENSITY IN 1-XGAXASYP1-Y (LAMBDA = 1.35-MU) DH LASERS [J].

NELSON, RJ .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :654-656

[3] 1.5 MU-M ROOM-TEMPERATURE PULSED OPERATION OF GAINASP-INP DOUBLE HETEROSTRUCTURE GROWN BY LP MOCVD [J].

RAZEGHI, M ;

HIRTZ, P ;

LARIVAIN, JP ;

BLONDEAU, R ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1981, 17 (18) :643-642

[4] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.5 MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION (LP-MO CVD) [J].

RAZEGHI, M ;

HIRTZ, P ;

BLONDEAU, R ;

LARIVAIN, JP ;

NOEL, L ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1982, 18 (03) :132-133

[5] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.23-MU-M GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

HIRTZ, JP ;

HIRTZ, P ;

LARIVAIN, JP ;

BONDEAU, R ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1981, 17 (17) :597-598

[6]

RAZEGHI M, 1983, REV TECH THOMSON CSF, V15, P1

[7]

RAZEGHI M, 1983, UNPUB J ELECTRONIC M

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