EXAFS STUDIES ON (CU,IN)SE2

被引:2
|
作者
YAMAGUCHI, H
KUWAHARA, Y
OYANAGI, H
NAKANISHI, H
IRIE, T
机构
[1] INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN
[2] TOKYO UNIV SCI,FAC SCI & TECHNOL,NODA,CHIBA 278,JAPAN
[3] TOKYO UNIV SCI,DEPT APPL ELECTR,NODA,CHIBA 278,JAPAN
关键词
CHALCOPYRITE; (CU; IN)SE2; LOCAL STRUCTURE; BOND LENGTH; EXAFS;
D O I
10.7567/JJAPS.32S3.567
中图分类号
O59 [应用物理学];
学科分类号
摘要
The local structure of chalcopyrite (Cu, In)Se2 has been investigated by ''tended X-ray absorption fine structure (EXAFS) measurements on the Cu K- and the Se K-edges. The values of the Cu-Se and the In-Se bond lengths were determined for various values of the Cu/In ratio, and the Se position parameter u was estimated from the obtained bond lengths and the lattice parameters. For the sample with Cu / In = 0.96, the u-values obtained from the Cu-Se and the In-Se bond lengths are consistent with each other, and it was determined as 0.223. On the other hand, the relation of these structural parameters show a deviation from the values expected for the chalcopyrite structure as the Cu / In ratio deviates from 0.96. These results indicate that the chalcopyrite single phase is obtained within a narrow range of the Cu / In ratio around 0.96 while a structural disorder due to either the compositional fluctuation or the multiphase occurs as the Cu/In ratio deviates from 0.96.
引用
收藏
页码:567 / 569
页数:3
相关论文
共 50 条
  • [1] High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se2 surface
    Canava, B
    Vigneron, J
    Etcheberry, A
    Guillemoles, JF
    Lincot, D
    APPLIED SURFACE SCIENCE, 2002, 202 (1-2) : 8 - 14
  • [2] Studies on sulfur diffusion into Cu(In,Ga)Se2 thin films
    Basol, BM
    Halani, A
    Leidholm, C
    Norsworthy, G
    Kapur, VK
    Swartzlander, A
    Matson, R
    PROGRESS IN PHOTOVOLTAICS, 2000, 8 (02): : 227 - 235
  • [3] Application of OIM to studies of Cu(In,Ga)Se2 thin films
    Merrill, JM
    CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005, 2005, : 465 - 467
  • [4] Surface sulfurization studies of Cu(InGa)Se2 thin film
    Singh, UP
    Shafarman, WN
    Birkmire, RW
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (05) : 623 - 630
  • [5] Cathodoluminescence studies of Cu(In,Ga)Se2 thin-films
    Ott, N
    Hanna, G
    Albrecht, M
    Rau, U
    Werner, JH
    Strunk, HP
    POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 133 - 138
  • [6] Grain growth studies of thin Cu(In, Ga)Se2 films
    Schlenker, T
    Valero, ML
    Schock, HW
    Werner, JH
    JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) : 178 - 183
  • [7] Preparation of Cu(In,Ga)Se2 thin film by sputtering from Cu(In,Ga)Se2 quaternary target
    Jiang Liu
    Daming Zhuang
    Hexin Luan
    Mingjie Cao
    Min Xie
    Xiaolong Li
    Progress in Natural Science:Materials International, 2013, 23 (02) : 133 - 138
  • [8] Preparation of Cu(In,Ga)Se2 thin film by sputtering from Cu(In,Ga)Se2 quaternary target
    Liu, Jiang
    Zhuang, Daming
    Luan, Hexin
    Cao, Mingjie
    Xie, Min
    Li, Xiaolong
    PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL, 2013, 23 (02) : 133 - 138
  • [9] Chemical and structural characterization of Cu(In, Ga)Se2/Mo interface in Cu(In, Ga)Se2 solar cells
    Matsushita Electric Industry Co, Ltd, Kyoto, Japan
    Jpn J Appl Phys Part 2 Letter, 10 A (L1253-L1256):
  • [10] Cu(In,Ga)Se2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se2 quaternary alloy and In targets
    Y. C. Lin
    Z. Q. Lin
    C. H. Shen
    L. Q. Wang
    C. T. Ha
    Chris Peng
    Journal of Materials Science: Materials in Electronics, 2012, 23 : 493 - 500