ELECTROLUMINESCENCE IN THE VISIBLE RANGE DURING ANODIC-OXIDATION OF POROUS SILICON FILMS

被引:376
作者
HALIMAOUI, A [1 ]
OULES, C [1 ]
BOMCHIL, G [1 ]
BSIESY, A [1 ]
GASPARD, F [1 ]
HERINO, R [1 ]
LIGEON, M [1 ]
MULLER, F [1 ]
机构
[1] UNIV JOSEPH FOURIER,SPECT PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE
关键词
D O I
10.1063/1.105578
中图分类号
O59 [应用物理学];
学科分类号
摘要
Porous silicon/silicon structures under anodic oxidation conditions give rise to an electroluminescence phenomenon in the visible range. Using an optical multichannel analyzer the spectral distribution of the emitted light was measured - in situ - during the anodic oxidation step. Recorded spectra show a maximum which shifts continuously from red-orange at the beginning of the process towards the yellow range. The visible emission well above the band gap of bulk silicon is attributed to a quantum size effect in the very small size (5-20 angstrom) silicon island which constitutes the porous silicon skeleton. The light emission is interrupted when the current flow stops due to the formation of a continuous oxide layer at the porous silicon/silicon interface.
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页码:304 / 306
页数:3
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