MEASUREMENTS OF RESIDUAL DEFECTS AND 1-F NOISE IN ION-IMPLANTED P-CHANNEL MOSFETS

被引：10
作者：
WANG, KL
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 04期
关键词：
D O I：
10.1109/T-ED.1978.19110
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：478 / 484
页数：7
相关论文
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