NEW TRANSIENT ELECTRICAL-POLARIZATION PHENOMENON IN SAWTOOTH SUPER-LATTICES

被引:71
作者
CAPASSO, F
LURYI, S
TSANG, WT
BETHEA, CG
LEVINE, BF
机构
关键词
D O I
10.1103/PhysRevLett.51.2318
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2318 / 2321
页数:4
相关论文
共 13 条
[1]   NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J].
ALLYN, CL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1980, 36 (05) :373-376
[2]  
ASPNES D, COMMUNICATION
[3]   ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].
CAPASSO, F ;
TSANG, WT ;
HUTCHINSON, AL ;
WILLIAMS, GF .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40
[4]   STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].
CAPASSO, F ;
TSANG, WT ;
WILLIAMS, GF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :381-390
[5]   BAND-GAP ENGINEERING VIA GRADED GAP, SUPER-LATTICE, AND PERIODIC DOPING STRUCTURES - APPLICATIONS TO NOVEL PHOTODETECTORS AND OTHER DEVICES [J].
CAPASSO, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :457-461
[6]   OBSERVATION OF SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES [J].
CHANG, LL ;
KAWAI, N ;
SAIHALASZ, GA ;
LUDEKE, R ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1979, 35 (12) :939-942
[7]  
COOPER JA, 1982, IEEE ELECTRON DEVICE, V3, P497
[8]   DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J].
DINGLE, R ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1327-1330
[9]   NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J].
ESAKI, L ;
CHANG, LL .
PHYSICAL REVIEW LETTERS, 1974, 33 (08) :495-498
[10]   MEASUREMENT OF HIGH ELECTRON-DRIFT VELOCITY IN A SUB-MICRON, HEAVILY DOPED GRADED GAP ALXGA1-XAS LAYER [J].
LEVINE, BF ;
BETHEA, CG ;
TSANG, WT ;
CAPASSO, F ;
THORNBER, KK ;
FULTON, RC ;
KLEINMAN, DA .
APPLIED PHYSICS LETTERS, 1983, 42 (09) :769-771