Electrical Characteristics of Organic Thin-film Transistors with Polyvinylpyrrolidone as a Gate Insulator

被引：14

作者：

Choi, Jong Sun ^{[1
]}

机构：

[1] Hongik Uni, Dept Elect Informat & Control Engn, 72-1 Sangsu Dong, Seoul 121791, South Korea

来源：

JOURNAL OF INFORMATION DISPLAY | 2008年 / 9卷 / 04期

关键词：

organic thin-film transistor; polyvinylpyrrolidone; insulator;

D O I：

10.1080/15980316.2008.9652068

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports the electrical characteristics of polyvinylpyrrolidone (PVPy) and the performance of organic thin-film transistors (OTFTs) with PVPy as a gate insulator. PVPy shows a dielectric constant of about 3 and contributes to the upright growth of pentacene molecules with 15.3 angstrom interplanar spacing. OTFT with PVPy exhibited a field-effect mobility of 0.23 cm(2)/Vs in the saturation regime and a threshold voltage of -12.7 V. It is notable that there was hardly any threshold voltage shift in the gate voltage sweep direction. Based on this reliable evidence, PVPy is proposed as a new gate insulator for reliable and high-performance OTFTs.

引用

页码：35 / 38

页数：4

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