GAAS VERTICAL JFET OPERATED IN BIPOLAR MODE (GAAS BMFET)

被引：4
作者：
SCHWEEGER, G
COCORULLO, G
DELLACORTE, FG
HARTNAGEL, HL
VITALE, G
SPIRITO, P
机构：
[1] CNR,IRECE,NAPLES,ITALY
[2] NAPLES UNIV,DEPT ELECTR ENGN,I-80138 NAPLES,ITALY
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 12期
关键词：
FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19910681
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first experimental results of current amplification in a vertical JFET on GaAs operated in the bipolar mode are presented. h(fe) as high as 30 has been measured at high current densities. The technology of this device is described and possible applications are discussed.
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页码：1097 / 1098
页数：2
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