DEFECTS AND MICROVOIDS IN A-SI AND A-SI-H

[1] ADLER D, 1984, SEMICONDUCT SEMIMET, V21, P291

[2] DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 3 - 14

[3] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR CELLS, 1983, 9 (1-2): : 133 - 148

[4] ADLER D, 1985, PHYSICAL PROPERTIES, P5

[5] CAO B, 1982, NUCL TECHN, V6, P70

[6] INFRARED-ABSORPTION IN A-SI-H - 1ST OBSERVATION OF GASEOUS MOLECULAR H-2 AND SI-H OVERTONE [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (02) : 210 - 213

[7] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1976, 14 (07): : 2709 - 2714

[8] A STUDY OF DEFECTS IN AMORPHOUS-SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 155 - 160

[9] SMALL-ANGLE-SCATTERING EVIDENCE OF VOIDS IN HYDROGENATED AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (16) : 1161 - 1163

[10] HAUTOJARVI P, 1979, POSITIONS SOLIDS

[1] ADLER D, 1984, SEMICONDUCT SEMIMET, V21, P291

[2] DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 3 - 14

[3] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR CELLS, 1983, 9 (1-2): : 133 - 148

[4] ADLER D, 1985, PHYSICAL PROPERTIES, P5

[5] CAO B, 1982, NUCL TECHN, V6, P70

[6] INFRARED-ABSORPTION IN A-SI-H - 1ST OBSERVATION OF GASEOUS MOLECULAR H-2 AND SI-H OVERTONE [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (02) : 210 - 213

[7] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1976, 14 (07): : 2709 - 2714

[8] A STUDY OF DEFECTS IN AMORPHOUS-SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 155 - 160

[9] SMALL-ANGLE-SCATTERING EVIDENCE OF VOIDS IN HYDROGENATED AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (16) : 1161 - 1163

[10] HAUTOJARVI P, 1979, POSITIONS SOLIDS